Perfect imperfection: Electrode defects boost resistive memory efficiency ...Middle East

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Perfect imperfection: Electrode defects boost resistive memory efficiency
Resistive switching memory devices offer several advantages over the currently used computer memory technology. Researchers from the MIPT Atomic Layer Deposition Lab have joined forces with colleagues from Korea to study the impact of electrode surface morphology on the properties of a resistive switching memory cell. It turned out that thicker electrodes have greater surface roughness and are associated with markedly better memory cell characteristics

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