The Taiwan Semiconductor Manufacturing Company (TSMC), in partnership with the National Yang Ming Chiao Tung University (NYCU) in Taipei, Taiwan, has made a key breakthrough for next-generation transistor design. TSMC and the NYCU have demonstrated that instead of focusing on depositing new materials on the transistor channel, a better approach is to engineer the channel material to create a buffer before adding the insulating material and then the gate to control the electron flow across the transistor. TSMC & NYCU Demonstrate That Depositing Epitaxial Aluminum On Monolayer Molybdenum Disulfide (MoS₂) Channel Leads To Gate Implementation With Low Leakage Most of […]
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