The advancements in High Bandwidth Memory (HBM) have led South Korean memory manufacturer SK hynix to tackle another performance bottleneck, which can be resolved by developing High Bandwidth Storage (HBS), enabling future smartphones and tablets to flaunt impressive AI capabilities. The company will achieve this feat by stacking up to 16 stacks of DRAM and NAND chips together using a technology called vertical wire fan-out (VFO) to improve data processing speeds. VFO helps prevent data transmission losses because it connects stacks of DRAM and NAND chips in a straight line, as opposed to curved wire bonding A report from ETNews […]
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