Most modern tech, including instruments used for deep-space exploration, uses transistors to control the flow of current. But the new device is a type of junction field-effect transistor (JFET), where the strength of an electrical field changes the channel’s conductivity.
The researchers outlined how the new transistor works in a study published Aug. 17 in the journal APL Electronic Devices.
As the scientists pointed out in the new study: "Past landers have been limited to only a few hours by silicon-based electronics." Venera 13, a Soviet-era lander, holds the world record for the longest time survived on Venus by a spacecraft, at 2 hours, 7 minutes.
But recently developed SiC-JFETs have all met the same two problems: low controllability and large leakage currents. The former is linked to how the SiC substrate is doped with other atoms to alter its electrical properties, defining its gate (where the electrical field is created) and channel (where the current flows) regions.
The team used dopants to create two semiconductor "wells" in the SiC around the transistor to avoid large leakage currents. (Image credit: Science Graphics)Furthermore, at temperatures above 660 F (350 C), the SiC substrate can become less electrically resistive, allowing current to flow even when the transistor is switched off. This makes it harder for the JFET to control current properly, potentially causing incorrect signals and increased power consumption.
"We believe the lack of development is because the research community has been trying to apply silicon-era thinking to a fundamentally different material," said first author of the study Mitsuaki Kaneko, associate professor of engineering at Kyoto University, in a statement.
Turning the transistor on its head
Its gate region is heavily doped by design, so when dopant atoms in the channel penetrate deeper into the SiC, it doesn't change the overall doping profile of the channel-gate region, limiting its impact on the threshold voltage even at high temperatures.
A robust transistor could be used in surface probes on Venus, where the thick carbon dioxide atmosphere can reach 860 F (460 C). (Image credit: Science Graphics)
Researchers measured how well the new JFET could switch current on and off and how closely the actual threshold voltage matched the theoretical value, based on its thickness and level of doping. They recorded these metrics at temperatures ranging from room temperature to 1,110 F (600 C).
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Before it can be launched into space or hooked up to a plane, the team still needs to test and optimise the transistor for practical use. This includes integrating it into more complex circuits, scaling it up to wafer-level and ensuring that the entire circuit package will withstand extreme temperatures and pressures.
Indeed, it may not be too lofty a goal. NASA demonstrated that integrated circuits with SiC-JFETs could withstand temperatures of 860 F (460 C) and 9.3 MPa of pressure for 60 days, and 930°F (500 C) in the air for over a year. Plus, in 2024, a team from the National Institute for Materials Science in Japan developed a MOSFET out of diamond that could operate above 570 F (300 C).
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