A team of researchers at the Indian Institute of Technology Roorkee (IIT Roorkee) led by Prof Davinder Kaur, Dept of Physics, IIT Roorkee, along with the National Physical Laboratory, India, have been able to fabricate two Semiconductor-Insulator-Semiconductor (SIS) heterojunctions based Near-infrared (NIR) photodetectors for Ultrafast photoresponse by direct current (dc) magnetron sputtering technique. The DC magnetron sputtering process involves a vacuum chamber containing the target material parallel to the target substrate. The vacuum chamber contains a high-purity inert gas such as argon that becomes charged when exposed to a pulsed DC current.
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